Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E:C | Dynamic random access memory | DEX RePower IGBT Power Stack IC ADC 16BIT SIG-DELTA TSOT23-8

IC ADC 16BIT SIG-DELTA TSOT23-8

Please see the section below for additional details Model

2 SSP controllers

Additional Information

Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E:C | Dynamic random access memory | DEX RePower IGBT Power Stack IC ADC 16BIT SIG-DELTA TSOT23-8Micron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E: C features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency 1